Diode laser‐crystallization for the formation of passivating contacts for solar cells

A new method of diode laser treatment passivating contacts for solar cells application based on electron beam evaporated highly doped amorphous silicon (a-Si) layers deposited solar-grade Czochralski wafers with SiOx tunneling is investigated. In a first step, an interface oxide grown and n-type a-Si layer both sides by evaporation. next the applied. Two different scanning speeds 15 20 mm s−1 are used. Electron backscattering diffraction quasi-steady-state photo conductance measurements indicate that can be crystallized without breaking up thin layer. To determine best parameters, lifetime implied open-circuit voltage each power measured. The results show fitted 4.06 ms to 711 mV after passivation step.